unisonic technologies co., ltd 1n40a preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r205-029.b 1a, 400v n-channel power mosfet ? description the utc 1n40a is an n-channel mode power mosfet using utc? s advanced technology to provide customers with planar stripe and dmos technology. this technology is specialized in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 1n40a is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. ? features * high switching speed * r ds(on) < 6.8 ? @ v gs = 10v, i d = 0.5a * 100% avalanche tested ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing - 1n40ag-aa3-r sot-223 g d s tape reel 1N40AL-TM3-T 1n40ag-tm3-t to-251 g d s tube note: pin assignment: g: gate d: drain s: source 1n40ag-ta3-r (1)packing type (2)package type (3)green package (1) t: tubel, r: tape reel (2) aa3: sot-223, tm3: to-251 (3) l: lead free, g: halogen free and lead free
1n40a preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r205-029.b ? marking sot-223 to-251
1n40a preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r205-029.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v continuous (t c =25c) i d 1 a drain current pulsed (note 2) i dm 4 a avalanche energy single pulsed (note 3) e as 40 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns sot-223 1 w power dissipation to-251 p d 25 w sot-223 125 w/c derate above 25c to-251 p d 0.2 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 80mh, i as = 1a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 1.8a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit sot-223 150 c/w junction to ambient to-251 ja 110 c/w sot-223 125 c/w junction to case to-251 jc 5 c/w
1n40a preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r205-029.b ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 400 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 0.4 v/c drain-source leakage current i dss v ds =400v, v gs =0v 1 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =0.5a 4.0 6.8 ? dynamic parameters input capacitance c iss 125 150 pf output capacitance c oss 20 30 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 17 28 pf switching parameters total gate charge q g 10 15 nc gate to source charge q gs 3.22 nc gate to drain charge q gd v gs =10v, v ds =50v, i d =1.3a (note 1, 2) 0.8 nc turn-on delay time t d(on) 33 40 ns rise time t r 20 35 ns turn-off delay time t d(off) 58 78 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 17 30 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 1.0 a maximum body-diode pulsed current i sm 4.0 a drain-source diode forward voltage v sd i s =1a, v gs =0v 1.5 v notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
1n40a preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r205-029.b ? test circuits and waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
